| PART |
Description |
Maker |
| HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的（200万Bank6）同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| NT5SV8M16FS NT5SV8M16FT |
128Mb Synchronous DRAM
|
NANYA
|
| H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| EM488M1644VTB EM488M1644VTB-75FL EM488M1644VTB-7FL |
128Mb (2Mx4Bankx16) Synchronous DRAM
|
Eorex Corporation
|
| EM488M1644VTD-75F EM488M1644VTD-7F |
128Mb (2Mx4Bankx16) Synchronous DRAM
|
Eorex Corporation
|
| IS42RM32400E |
128Mb Mobile Synchronous DRAM
|
ISSI
|
| KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
|
| KM416S8030BN-G/FH KM416S8030BN-G/FL |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| H57V2582GTR |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
|
Hynix Semiconductor
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit），带ECC内存的基础6Mx8BanksK的参考。，3.3
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit），带ECC内存的基础16Mx8BanksK的参考。，3.3
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
